(#JR-2502488) RF Technology Development Epitaxy Principal Engineer (2026 New College Graduate)

About GlobalFoundries 

GlobalFoundries (GF) is a leading full-service semiconductor foundry providing a unique combination of design, development, and fabrication services to some of the world’s most inspired technology companies. With a global manufacturing footprint spanning three continents, GF makes possible the technologies and systems that transform industries and give customers the power to shape their markets. For more information, visit www.gf.com. 

Summary of Role: 

GlobalFoundries is a leading full-service semiconductor foundry with a global manufacturing footprint spanning three continents. GlobalFoundries' RF Technology Development Organization is looking for an epitaxial process engineer in developing semiconductor technologies to join our RF team in Essex Junction, VT. 

Essential Responsibilities include: 

· Develop, evaluate and qualify Gallium Nitride and/or Silicon Germanium epitaxial process recipes. 

· Define epitaxial growth conditions and controls methodology to meet both the technology performance requirements and the manufacturability criteria. 

· Process Window Design of Experiments - design, execution, and analysis of results. 

· Collaborate with unit process integration, device engineering, failure analysis and characterization team to improve device performance and yield. 

· Own and drive technical process problem solving. 

· Innovate new methods of continuous process/device improvement. 

· Responsible for development, optimization, and qualification of semiconductor devices and processes to meet performance, cost and yield requirements.

Other Responsibilities: 

· Perform all activities in a safe and responsible manner and support all Environmental, Health, Safety & Security requirements and programs. 

Required Qualifications: 

· Education –Master’s or PhD in Electrical, Materials Science,  Physics, or other relevant engineering or physical science discipline from an accredited degree program. 

· Familiarity with epitaxial growth techniques and hands-on experience with epitaxial growth. 

· Familiarity with characterization and measurement techniques to evaluate epitaxial growth processes. 

· Language Fluency - English (Written & Verbal) 

Preferred Qualifications: 

· Minimum 3 years of relevant Gallium Nitride or Silicon Germanium epitaxial growth engineering experience. 

· Minimum 3 Years of Experience in Gallium Nitride HEMT devices or SiGe Bipolar devices processing and/or semiconductor process development. 

· Knowledge of semiconductor device physics and/or RF fundamentals (e.g. S-parameters) 

· Prior related internship or co-op experience. 

· Demonstrated prior leadership experience in the workplace, school projects, competitions, etc. 

· Project management skills, i.e. the ability to innovate and execute solutions that matter; the ability to navigate ambiguity. 

· Strong written and verbal communication skills 

· Strong planning & organizational skills 

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Expected Salary Range

$79,100.00 - $145,800.00

The exact Salary will be determined based on qualifications, experience and location.

If you need a reasonable accommodation for any part of the employment process, please contact us by email at usaccommodations@gf.com and let us know the nature of your request and your contact information. Requests for accommodation will be considered on a case-by-case basis. Please note that only inquiries concerning a request for reasonable accommodation will be responded to from this email address. 

An offer with GlobalFoundries is conditioned upon the successful completion of pre-employment conditions, as applicable, and subject to applicable laws and regulations. 

GlobalFoundries is fully committed to equal opportunity in the workplace and believes that cultural diversity within the company enhances its business potential. GlobalFoundries goal of excellence in business necessitates the attraction and retention of highly qualified people. Artificial barriers and stereotypic biases detract from this objective and may be illegally discriminatory. 

All policies and processes which pertain to employees including recruitment, selection, training, utilization, promotion, compensation, benefits, extracurricular programs, and termination are created and implemented without regard to age, ethnicity, ancestry, color, marital status, medical condition, mental or physical disability, national origin, race, religion, political and/or third-party affiliation, sex, sexual orientation, gender identity or expression, veteran status, or any other characteristic or category specified by local, state or federal law